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MJD18002D2 Bipolar NPN Transistor
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
The MJD18002D2 is a state-of-the-art high speed, high gain bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no longer a need to guarantee an hFE window.
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POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS
* Low Base Drive Requirement * High Peak DC Current Gain (55 Typical) @ IC = 100 mA * Extremely Low Storage Time Min/Max Guarantees Due to the * * * * * * *
H2BIP Structure which Minimizes the Spread Integrated Collector-Emitter Free Wheeling Diode Fully Characterized and Guaranteed Dynamic VCEsat Characteristics Make It Suitable for PFC Application Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Six Sigma(R) Process Providing Tight and Reproductible Parameter Spreads Pb-Free Package is Available
Rating Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Collector Current Collector Current Base Current Base Current - Continuous - Peak (Note 1) - Continuous - Peak (Note 1) Symbol VCEO VCBO VCES VEBO IC ICM IB IBM Value 450 1000 1000 11 2.0 5.0 1.0 2.0 Unit Vdc Vdc Vdc Vdc Adc Adc YWW 180 02D2G
4 12 3
MAXIMUM RATINGS
DPAK CASE 369C STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 seconds Symbol PD TJ, Tstg RqJC RqJA TL Value 50 0.4 -65 to +150 5.0 71.4 260 Unit W W/C C C/W C/W C
Y WW 18002D2 G
= Year = Work Week = Device Code = Pb-Free Package
ORDERING INFORMATION
Device MJD18002D2T4 MJD18002D2T4G Package DPAK DPAK (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%.
(c) Semiconductor Components Industries, LLC, 2006
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MJD18002D2/D
1
January, 2006 - Rev. 2
IIII III I I I IIII I IIIIIII IIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II II IIIIIII IIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III III II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIII I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II I I IIIIIII IIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIII I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIII IIII I I I III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII II IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIII IIII I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I III I I I I III IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
DYNAMIC SATURATION VOLTAGE DIODE CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Dynamic Saturation Voltage Determinated 1 ms and 3 ms respectively after rising IB1 reaches 90% of final IB1 Forward Recovery Time (IF = 0.4 Adc, di/dt = 10 A/ms) Forward Diode Voltage (IEC = 1.0 Adc) Input Capacitance (VEB = 8 Vdc) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) DC Current Gain (IC = 0.4 Adc, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) Base-Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) (IC = 1.0 Adc, IB = 0.2 Adc) Emitter-Cutoff Current (VEB = 10 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Emitter-Base Breakdown Voltage (IEBO = 1 mA) Collector-Base Breakdown Voltage (ICBO = 1 mA) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) (IC = 1.0 Adc, VCE = 1.0 Vdc) (IC = 1.0 Adc, IB = 0.2 Adc) (IF = 1.0 Adc, di/dt = 10 A/ms) (IEC = 0.4 Adc) (VCE = 500 V, VEB = 0) Characteristic IC = 1 Adc IB1 = 0.2 A VCC = 300 Vdc IC = 0.4 Adc IB1 = 40 mA VCC = 300 Vdc
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MJD18002D2
@ 3 ms
@ 1 ms
@ 3 ms
@ 1 ms
2 @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 125C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 125C VCEO(sus) VCE(dsat) Symbol VCE(sat) VBE(sat) VCBO VEBO ICEO IEBO ICES VEC Cob hFE Cib tfr ft 1000 Min 450 14 8.0 6.0 4.0 11
- -
- - - - - - - - - - - - - - - - - - -
- -
1100
0.40 0.65
0.36 0.50
0.78 0.87
11.7 Typ 480 517 340 570 2.5 7.4 0.6 1.0 1.2 10 6.0 50 13 25 15 14 - - - - -
1.3
0.75 1.2
MaxIII Unit
500
100
500
100 500 100
100
1.3
1.5
0.6 1.0
1.0 1.1
- - - - - - - - - - - - -
- -
mAdc
mAdc
mAdc
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
ns
V -
IIIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIII I IIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I III I I I IIIII I I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIII IIII I IIII I IIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I III I I III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIII IIII I I IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I III I I I I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIII I III I I IIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIIII I IIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I IIII I I IIIIIIIIIIIIIII I IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I III I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIII I I I IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) Fall Time @ TC = 25C tf @ TC = 125C IC = 0.4 Adc Storage Time @ TC = 25C ts IB1 = 40 mAdc @ TC = 125C IB2 = 0.2 Adc Cross-over Time @ TC = 25C tc @ TC = 125C SWITCHING CHARACTERISTICS: Resistive Load (D.C.S. 10%, Pulse Width = 40 ms) Cross-over Time Storage Time Fall Time Cross-over Time Storage Time Fall Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time Characteristic IC = 0.4 Adc, IB1 = 40 mAdc IB2 = 200 mAdc VCC = 300 Vdc IC = 1.0 Adc, IB1 = 0.2 Adc IB2 = 0.5 Adc VCC = 300 Vdc IC = 0.8 Adc IB1 = 160 mAdc IB2 = 160 mAdc IC = 1.0 Adc IB1 = 0.2 Adc IB2 = 0.5 Adc
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MJD18002D2
3 @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C Symbol ton ton toff toff tc ts tc ts tf tf 0.95 - Min 2.1 - 0.4 - 0.8 - - - - - - - - - - - - - - - - - - - 1.05 1.45 Typ 100 100 275 350 130 140 110 100 130 120 100 94 225 375 - 3.0 - 0.7 - 1.5 - 1.5 100 115 1.25 - Max 150 - 150 - 350 - 175 - 175 - 175 - 150 - 350 - 1.2 - 2.4 - 0.7 - 1.1 - Unit ns ns ns ns ns ns ns ns ms ms ms ms ms
MJD18002D2
Typical Static Characteristics
100 VCE = 1 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 80 TJ = 125C 80 TJ = 125C 100 VCE = 5 V
60
25C
60
25C
40 -20C 20 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10
40 -20C 20 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10
Figure 1. DC Current Gain @ 1 V
Figure 2. DC Current Gain @ 5 V
4 TJ = 25C 3 2A 1A 2 400 mA 1 IC = 200 mA 0 0.001 0.01 0.1 1 IB, BASE CURRENT (AMPS) 10 1.5 A VCE, VOLTAGE (VOLTS) VCE, VOLTAGE (VOLTS)
100 IC/IB = 20
10
1 25C TJ = 125C 0.1 -20C 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10
Figure 3. Collector Saturation Region
Figure 4. Collector-Emitter Saturation Voltage
100 IC/IB = 10 VCE, VOLTAGE (VOLTS) VCE, VOLTAGE (VOLTS)
10 IC/IB = 5
10
1
1 TJ = 125C 0.1 -20C 0.001 25C
TJ = 125C 0.1 -20C 0.001
25C
0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Collector-Emitter Saturation Voltage
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4
MJD18002D2
Typical Static Characteristics
10 IC/IB = 5 VBE, VOLTAGE (VOLTS) VBE, VOLTAGE (VOLTS) 10 IC/IB = 10
1 -20C 25C TJ = 125C
1 -20C 25C TJ = 125C
0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10
0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10
Figure 7. Base-Emitter Saturation Region IC/IB = 5
Figure 8. Base-Emitter Saturation Region IC/IB = 10
IC/IB = 20 VBE, VOLTAGE (VOLTS)
FORWARD DIODE VOLTAGE (VOLTS)
10
10
1 -20C 25C TJ = 125C
1
VEC(V) = -20C
125C
25C
0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10
0.1
0.01 0.1 1 10 REVERSE EMITTER-COLLECTOR CURRENT (AMPS)
Figure 9. Base-Emitter Saturation Region IC/IB = 20
Figure 10. Forward Diode Voltage
Typical Switching Characteristics
1000 Cib (pF) C, CAPACITANCE (pF) TJ = 25C f(test) = 1 MHz 3000 2500 2000 1500 1000 500 IC/IB = 5 1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 0 0.1 0.4 0.7 1 1.3 IC, COLLECTOR CURRENT (AMPS) 1.6 TJ = 125C TJ = 25C IC/IB = 10
t, TIME (ms)
100
IBon = IBoff
VCC = 300 V
PW = 40 ms
Cob (pF) 10
Figure 11. Capacitance
Figure 12. Resistive Switch Time, ton
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MJD18002D2
Typical Switching Characteristics
5.5 5.0 4.5 t, TIME (ms) 4.0 IC/IB = 10 3.5 3.0 2.5 2.0 1.5 0.1 0.4 0.7 1 1.3 IC, COLLECTOR CURRENT (AMPS) 1.6 1 0 0.5 1 IC, COLLECTOR CURRENT (AMPS) 1.5 IC/IB = 5 TJ = 125C TJ = 25C IBon = IBoff 3
VCC = 300 V
PW = 40 ms 2.5 t, TIME (ms)
TJ = 125C TJ = 25C 2 IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH
1.5
Figure 13. Resistive Switch Time, toff
Figure 14. Inductive Storage Time, tsi @ IC/IB = 5
700 600 500 t, TIME (ms) 400 300 200 100 0 0 0.5 1 IC, COLLECTOR CURRENT (AMPS) 1.5 tfi TJ = 125C TJ = 25C IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH IC/IBon = 5
4 TJ = 125C TJ = 25C tc t, TIME (ms) 3 IC = 1 A 2 IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH
1
IC = 300 mA
0
3
6
9 hFE, FORCED GAIN
12
15
Figure 15. Inductive Switching, tc & tfi @ IC/IB = 5
Figure 16. Inductive Storage Time
1000 TJ = 125C TJ = 25C 800 tfi, FALL TIME (ns) t, TIME (ms) IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH IC = 1 A
1800 TJ = 125C TJ = 25C IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH
1200
600
IC = 1 A
400
600 200 0 3 5 7 9 11 hFE, FORCED GAIN IC = 0.3 A 13 15 0 3 6 9 hFE, FORCED GAIN 12 15 IC = 0.3 A
Figure 17. Inductive Fall Time
Figure 18. Inductive Cross-Over Time
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MJD18002D2
Typical Switching Characteristics
1600 IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH tc 800 tfi 400 0.4 TJ = 125C TJ = 25C 0 0 0.3 0.7 1.1 IC, COLLECTOR CURRENT (AMPS) 1.5 0 0.5 1 IC, COLLECTOR CURRENT (AMPS) 1.5 1.6 IC/IB = 5 1.2 t, TIME (ms)
1200 t, TIME (ms)
TJ = 125C TJ = 25C
0.8
IBoff = IC/2, VCC = 15 V, VZ = 300 V LC = 200 mH
IC/IB = 10
Figure 19. Inductive Switching Time, tfi & TC @ G = 10
Figure 20. Inductive Switching Time, tsi
200 TJ = 125C TJ = 25C 150 IBoff = IC/2, VCC = 15 V, VZ = 300 V LC = 200 mH t, TIME (ms)
300 IBoff = IC/2, VCC = 15 V, VZ = 300 V LC = 200 mH TJ = 125C TJ = 25C
250
t, TIME (ms)
200
IC/IB = 10
150
100
IC/IB = 5
100 IC/IB = 10 50 0 0.5 1 IC, COLLECTOR CURRENT (AMPS) 1.5 50 0 IC/IB = 5 0.5 1 IC, COLLECTOR CURRENT (AMPS) 1.5
Figure 21. Inductive Storage Time, tfi
Figure 22. Inductive Storage Time, tc
2.4 2.2 2.0 1.8 IB = 500 mA 1.6 IB = 100 mA 1.4 1.2 1 0 0.4 0.8 hFE, FORCED GAIN 1.2 1.6 IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH IB = 50 mA IB = 200 mA
CROSS-OVER TIME (ns)
Figure 23. Inductive Storage Time, tsi
Figure 24. Dynamic Saturation Voltage Measurements
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MJD18002D2
Typical Switching Characteristics
10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB Vclamp IC tsi 10% Vclamp tc 90% IB1 tfi 90% IC
10% IC
Figure 25. Inductive Switching Measurements
Table 1. Inductive Load Switching Drive Circuit
+15 V 1 mF 150 W 3W 100 W 3W MTP8P10 100 mF VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 W 500 mF 150 W 3W RB2 MTP12N10 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA IB2 Inductive Switching L = 200 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 VCE RB1 Iout IB IB1 IC PEAK
MJE210
COMMON
1 mF -Voff
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MJD18002D2
VFRM IC, COLLECTOR CURRENT (AMPS) 12 10 VF 8 0.1 VF 6 4 IF 2 0 10% IF 0 2 4 6 8 10 tfr 10 10 ms 1 DC 5 ms 1 ms 50 ms EXTENDED SOA 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1 ms
VFR (1.1 VF) Unless Otherwise Specified
VF
0.1
0.01
Figure 26. tfr Measurement
Figure 27. Forward Bias Safe Operating Area
IC, COLLECTOR CURRENT (AMPS)
2.5 POWER DERATING FACTOR TC = 125C Gain = 4 LC = 500 mH
1 Second Breakdown Derating 0.8
2
1.5 VBE(off) = -1.5 V 1 VBE(off) = -5 V 0.5 VBE = 0 V 0 0 600 200 400 800 1000 1200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.6
0.4
Thermal Derating
0.2 0
20
40
60 80 100 120 TC, CASE TEMPERATURE (C)
140
160
Figure 28. Reverse Bias Safe Operating Area
Figure 29. Forward Bias Power Derating
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 27 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second Breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on
Figure 27 may be found at any case temperature by using the appropriate curve on Figure 29. TJ(pk) may be calculated from the data in Figure 30. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 28). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
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MJD18002D2
1 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.01 0.1 1 t, TIME (ms) 10 100 1000 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 RqJC(t) = r(t) RqJC RqJC = 55/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk)RqJC(t)
Figure 30. Typical Thermal Response (ZqJC(t)) for MJD18002D2
1100 1000 900 800 700 600 BVCER(sus) @ 200 mA 500 400 10 100 1000 RBE () 10,000 100,000 TJ = 25C BVCER (Volts) @ 10 mA
440 420 400 380 360 340 320 300 0 0.5 1 1.5 IF, FORWARD CURRENT (AMPS) 2 di/dt = 10 A/ms TC = 25C
Figure 31. BVCER
Figure 32. Forward Recovery Time, tfr
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MJD18002D2
PACKAGE DIMENSIONS
DPAK CASE 369C ISSUE O
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 ---
-T- B V R
4
SEATING PLANE
C E
A S
1 2 3
Z U
K F L D G
2 PL
J H 0.13 (0.005) T
DIM A B C D E F G H J K L R S U V Z
M
STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
SOLDERING FOOTPRINT*
6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118
SCALE 3:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Six Sigma is a registered trademark and servicemark of Motorola, Inc.
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MJD18002D2/D

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